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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleTSM1NB60CW RPG
TSM1NB60CW RPG Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TSM1NB60CW RPG - Taiwan Semiconductor Corporation

Manifakti Nimewo Pati
TSM1NB60CW RPG
Manifakti
Taiwan Semiconductor
Allelco Nimewo Pati
32D-TSM1NB60CW RPG
ECAD modèl
Pati Deskripsyon
MOSFET N-CHANNEL 600V 1A SOT223
Deskripsyon detaye
Pake
TO-261-4, TO-261AA
Done fèy
TSM1NB60.pdf
RoHs Status
Nan stok: 55870

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Kantite

Espesifikasyon

Espesifikasyon TSM1NB60CW RPG Tech
Taiwan Semiconductor Corporation - TSM1NB60CW RPG espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Taiwan Semiconductor Corporation - TSM1NB60CW RPG

Pwodwi atribi Valè atribi  
Manifakti Taiwan Semiconductor  
Vgs (th) (Max) @ Id 4.5V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SOT-223  
Seri -  
Rds Sou (Max) @ Id, Vgs 10Ohm @ 500mA, 10V  
Dissipasyon pouvwa (Max) 39W (Tc)  
Pake / Ka TO-261-4, TO-261AA  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 138 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 6.1 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 1A (Tc)  
Nimewo pwodwi baz TSM1NB60  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Taiwan Semiconductor Corporation TSM1NB60CW RPG.

Pwodwi atribi TSM1NB60CW RPG TSM1N80CW RPG TSM210N02CX TSM1NB60CW
Nimewo Pati TSM1NB60CW RPG TSM1N80CW RPG TSM210N02CX TSM1NB60CW
Manifakti Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Drenaj Sous Voltage (Vdss) 600 V 800 V 20 V 600 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 6.1 nC @ 10 V 6 nC @ 10 V 5.8 nC @ 4.5 V 6.1 nC @ 10 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (th) (Max) @ Id 4.5V @ 250µA 5V @ 250µA 0.8V @ 250µA 4.5V @ 250µA
FET Feature - - - -
Vgs (Max) ±30V ±30V ±10V ±30V
Founisè Aparèy pake SOT-223 SOT-223 SOT-23 SOT-223
Pake / Ka TO-261-4, TO-261AA TO-261-4, TO-261AA TO-236-3, SC-59, SOT-23-3 TO-261-4, TO-261AA
Kouran - Kontini Drain (Id) @ 25 ° C 1A (Tc) 300mA (Ta) 6.7A (Tc) 1A (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 138 pF @ 25 V 200 pF @ 25 V 600 pF @ 10 V 138 pF @ 25 V
Rds Sou (Max) @ Id, Vgs 10Ohm @ 500mA, 10V 21.6Ohm @ 150mA, 10V 21mOhm @ 4A, 4.5V 10Ohm @ 500mA, 10V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 1.8V, 4.5V 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Dissipasyon pouvwa (Max) 39W (Tc) 2.1W (Tc) 1.56W (Tc) 2.1W (Tc)
Nimewo pwodwi baz TSM1NB60 TSM1N80 TSM210 TSM1
Seri - - - -

TSM1NB60CW RPG fich PDF

Download TSM1NB60CW RPG PDF fich ak dokiman Taiwan Semiconductor Corporation pou TSM1NB60CW RPG - Taiwan Semiconductor Corporation.

Fich
TSM1NB60.pdf
Asanble PCN/orijin
SOT-223/ TO-252/ TO-251 Datasheet 10/Oct/2022.pdf

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TSM1NB60CW RPG

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32D-TSM1NB60CW RPG

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